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| CM1200HA-24J Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Single IGBTMODTM H-Series Module 1200 Amperes/1200 Volts A B U - M4 THD (2 TYP.) R K P E M G B S - M8 THD (2 TYP.) A C E C J G Q T - DIA. (4 TYP.) H L F N E D Description: Powerex IGBTMODTM Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Laser Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM1200HA-24J is a 1200V (VCES), 1200 Ampere Single IGBTMODTM Power Module. Type CM Current Rating Amperes 1200 VCES Volts (x 50) 24 E C G E Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K Inches 5.12 4.330.01 1.840 Millimeters 130.0 110.00.25 46.75 Dimensions L M N P Q R S T U Inches 0.79 0.77 0.75 0.61 0.51 0.35 M8 Metric 0.26 Dia. M4 Metric Millimeters 20.0 19.5 19.0 15.6 13.0 9.0 M8 Dia. 6.5 M4 1.730.04/0.02 44.01.0/0.5 1.460.04/0.02 37.01.0/0.5 1.42 1.25 1.18 1.10 1.08 36.0 31.8 30.0 28.0 27.5 1 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM1200HA-24J Single IGBTMODTM H-Series Module 1200 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25C) Peak Collector Current (Tj 150C) Emitter Current** (Tc = 25C) Peak Emitter Current** (Tj 150C) Maximum Collector Dissipation (Tc = 25C) (Tj < 150C) Max. Mounting Torque M8 Terminal Screws Max. Mounting Torque M6 Mounting Screws Mounting Torque G(E) Terminal M4 Module Weight (Typical) Isolation Voltage, Main Terminal to Base Plate, AC 1 Min. Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc - - - - Viso CM1200HA-24J -40 to +150 -40 to +125 1200 20 1200 2400* 1200 2400* 5800 95 40 15 1600 2500 Units C C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb in-lb Grams Volts Static Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VCES, VCE = 0V IC = 120mA, VCE = 10V IC = 1200A, VGE = 15V, Tj = 25C IC = 1200A, VGE = 15V, Tj = 125C Total Gate Charge Emitter Current Voltage** VCC = 600V, IC = 1200A, VGE = 15V IE = 1200A, VGE = 0V Min. - - 4.5 - - - - Typ. - - 6.0 2.4 2.5 5000 - Max. 6 0.5 7.5 3.1 - - 3.7 Units mA A Volts Volts Volts nC Volts Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switching Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr VCC = 600V, IC = 1200A, VGE1 = VGE2 = 15V, RG = 3.3, Resistive Load Switching Operation IE = 1200A, diE/dt = -2400A/s IE = 1200A, diE/dt = -2400A/s VGE = 0V, VCE = 10V Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 9.0 Max. 200 70 40 600 1800 1200 1500 300 - Units nF nF nF ns ns ns ns ns C Diode Reverse Recovery Time** Diode Reverse Recovery Charge** Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Thermal Resistance, Junction to Case** Thermal Resistance, Junction to Case** Contact Thermal Resistance Symbol Rth(j-c)Q Rth(j-c)R Rth(c-f) Test Conditions Per IGBT Per FWDi Per Module, Thermal Grease Applied Min. - - - Typ. - - - Max. 0.022 0.050 0.018 Units C/W C/W C/W * Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM1200HA-24J Single IGBTMODTM H-Series Module 1200 Amperes/1200 Volts OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 2400 VGE = 20V 15 12 2400 2000 11 IC, (AMPERES) 5 VCE = 10V Tj = 25C Tj = 125C VCE(sat), (VOLTS) 2000 1600 1200 Tj = 25C 4 VGE = 15V Tj = 25C Tj = 125C IC, (AMPERES) 1600 1200 800 3 10 800 9 400 8 0 0 2 4 6 8 10 VCE, (VOLTS) 2 400 0 0 4 8 12 16 20 VGE, (VOLTS) 1 0 0 500 1000 1500 2000 2500 IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 104 Tj = 25C Tj = 25C IC = 2400A Cies, Coes, Cres, (nF) 103 8 102 Cies 6 IC = 1200A IE, (AMPERES) 103 Coes 4 101 Cres 2 IC = 480A VGE = 0V 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 102 1.0 1.5 2.0 2.5 3.0 3.5 100 10-1 100 VCE, (VOLTS) 101 102 VEC, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) GATE CHARGE, VGE (TYPICAL) 104 103 103 20 IC = 1200A 16 SWITCHING TIME, (ns) 103 td(off) Irr, (AMPERES) VCC = 400V VCC = 600V tf t rr, (ns) VGE, (VOLTS) t rr 12 td(on) 102 Irr 102 8 102 tr VCC = 600V VGE = 15V RG = 3.3 Tj = 125C di/dt = -2400A/sec Tj = 25C 4 101 104 101 101 102 103 104 101 101 0 0 2000 4000 QG, (nC) 102 103 6000 8000 COLLECTOR CURRENT, IC, (AMPERES) IE, (AMPERES) 3 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM1200HA-24J Single IGBTMODTM H-Series Module 1200 Amperes/1200 Volts NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100 101 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 100 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.022C/W 100 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.05C/W 10-1 10-1 10-1 10-1 10-2 10-2 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 10-3 10-5 TIME, (s) 10-4 10-3 10-3 4 |
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